Dynamic random-access memory
- Period
- 1966
- Map
- Inventions map
Dynamic random-access memory is a type of random-access semiconductor memory that stores each bit of data in a memory cell. A DRAM memory cell usually consists of a microscopic capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology.
Sources: Wikipedia — Dynamic random-access memory · CC BY-SA 4.0
Earlier and later events nearby
- 1929–1939Great Depression
- 1944Bretton Woods system
- 1964Civil Rights Act of 1964
- 1966Dynamic random-access memoryThis page
- 1968Treaty on the Non-Proliferation of Nuclear Weapons
- 2001September 11 attacks
- 2007–20092008 financial crisis
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