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Dynamic random-access memory

Period
1966
Map
Inventions map

Dynamic random-access memory is a type of random-access semiconductor memory that stores each bit of data in a memory cell. A DRAM memory cell usually consists of a microscopic capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology.

Sources: Wikipedia — Dynamic random-access memory · CC BY-SA 4.0

Earlier and later events nearby

  1. 1929–1939Great Depression
  2. 1944Bretton Woods system
  3. 1964Civil Rights Act of 1964
  4. 1966Dynamic random-access memoryThis page
  5. 1968Treaty on the Non-Proliferation of Nuclear Weapons
  6. 2001September 11 attacks
  7. 2007–20092008 financial crisis

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